1 power transistors 2sD2222 silicon npn triple diffusion planar type darlington for power amplification complementary to 2sb1470 n features l optimum for 120w hifi output l high foward current transfer ratio h fe l low collector to emitter saturation voltage v ce(sat) n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 160 160 5 15 8 150 3.5 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 160v, i e = 0 v ce = 160v, i b = 0 v eb = 5v, i c = 0 i c = 30ma, i b = 0 v ce = 5v, i c = 1a v ce = 5v, i c = 7a i c = 7a, i b = 7ma i c = 7a, i b = 7ma v ce = 10v, i c = 0.5a, f = 1mhz i c = 7a, i b1 = 7ma, i b2 = C7ma, v cc = 50v min 160 10000 3500 typ 20 2 6 1.2 max 100 100 100 20000 3 3 unit m a m a m a v v v mhz m s m s m s * h fe2 rank classification t c =25 c ta=25 c rank q p h fe2 3500 to 10000 7000 to 20000 unit: mm internal connection 1:base 2:collector 3:emitter topC3l package 20.0 0.5 6.0 10.0 26.0 0.5 20.0 0.5 1.5 2.5 solder dip 10.9 0.5 123 2.0 0.3 3.0 0.3 1.0 0.2 5.0 0.3 3.0 4.0 2.0 5.45 0.3 0.6 0.2 1.5 2.7 0.3 1.5 2.0 f 3.3 0.2 3.0 b c e
2 power transistors 2sD2222 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 200 160 120 80 40 180 140 100 60 20 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =3.5w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 016 412 814 210 6 0 10 8 6 4 2 9 7 5 3 1 i b =1.0ma t c =25?c 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 t c =?5?c 25?c 125?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 t c =?5?c 25?c 125?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.1 1 10 0.03 30 0.3 3 10 10 2 10 3 10 4 10 5 v ce =5v 25?c ?5?c t c =125?c collector current i c ( a ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 1 10 10 2 10 3 10 4 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 012 10 8 26 4 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =1000 (? b1 =i b2 ) v cc =50v t c =25?c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c 10ms t=1ms dc i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sD2222 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 0 10 10 2 10 4 10 3 (1) (2) (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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